| The Effect of Atmosphere on the Sintering
of Nano-Crystalline Ą-Silicon Carbide
Doped with Boron Carbide |
M. S. Datta, A. K. Bandyopadhyay and B. Chaudhuri
Pages : 105-108
DOI :10.1080/0371750X.2004.11012142 |
| Abstract |
| The effect of atmosphere on the sintering of nano-crystalline ƒÑ-silicon carbide, doped with boron carbide and carbon, and prepared by attrition milling, has been studied under vacuum, argon and nitrogen atmospheres between 2000¢X and 2100¢XC. It has been found that the sintering atmosphere has a very critical influence on the sintering of silicon carbide. Sintering in vacuum provides maximum theoretical density, whereas the nitrogen atmosphere has a retarding effect and does not yield full densification. Argon atmosphere takes an intermediate role in the sintering process. The results have been explained in terms of a diffusion model. |
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