| Dielectric Properties of NaCu3Ti3Nb1–xSbxO12 Ceramics |
Mingwen Wang,a Yupeng Wang,a Wentao Hao,a, b, * Panpan Xu,c Qingshuang Tan,d
Shuai Yang,a Li Sun,a, b Ensi Caoa, b and Yongjia Zhanga, b
Pages : 198-201
DOI : 10.1080/0371750X.2018.1518729 |
| Abstract |
| In order to investigate the influence of Sb doping on the dielectric properties of
NaCu3Ti3NbO12 ceramics, a series of NaCu3Ti3Nb1–xSbxO12 ceramics were prepared by
conventional solid-state reaction technique. Their crystalline structure, microstructure,
dielectric properties and complex impedance were systematically investigated. All
these ceramics show giant permittivity phenomenon, and their low-frequency dielectric
loss decrease significantly but permittivity remains large with increased Sb doping.
Impedance spectroscopic analysis reveals that NaCu3Ti3Nb1–xSbxO12 ceramics are
composed of insulating grain boundaries and semiconducting grains, and their
resistance of grain boundary increases with increased Sb doping. According to internal
barrier layer capacitance effect, the decrease of low-frequency dielectric loss in
NaCu3Ti3Nb1–xSbxO12 ceramics with increased Sb doping should be caused by the
increase of grain boundary resistance.
[Keywords: NaCu3Ti3Nb1–xSbxO12 ceramics, Internal barrier layer capacitance effect,
Low-frequency dielectric loss, Grain boundary resistance] |
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