| Microwave Dielectric Properties of Sol-Gel Processed
Bi4Si3O12 Ceramics and Single Crystal |
Huidong Xie*, Fei Li, Haihong Xi and Di Zhou1
pages : 83-85
DOI : 10.1080/0371750X.2015.1011288 |
| Abstract |
| Microwave dielectric ceramics Bi4Si3O12 was made from powders prepared via sol-gel method as a potential candidate
of low temperature co-fired ceramics in microwave applications. The microwave dielectric properties of sol-gel
processed Bi4Si3O12 ceramics were compared with that of single crystal. The sintering temperature of the ceramics
ranged from 920o to 1010oC. The best microwave dielectric properties were obtained when the ceramics was sintered
at 980oC for 8 h with a permittivity of ~8.8, a Q×f value of ~41,898 GHz (at 11.5 GHz) and a temperature coefficient
value of –72 ppm/oC. The permittivity, Qf value, and temperature coefficient value of Bi4Si3O12 single crystal were
~15.9, 45,326 GHz (at 7.0 GHz) and –92 ppm/oC, respectively.
[Keywords: Sol-gel process, Dielectric properties, Ceramics, Bismuth orthosilicate] |
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