| Oxidation Behaviour of Infiltrated Reaction
Bonded Silicon Carbide |
v. N. MULAY, N. KISHAN REDDY AND M. A. JALEEL
Pages : 55-59
DOI : 10.1080/0371750X.1990.10822992 |
| Abstract |
| Oxidation studies of reaction bonded silicon carbide (RBSC) infiltrated
with vanadium carbide, boron carbide and molybdenum disillcide
(S wt% each) have been carried out at 1350°, 1400° and 1450°C
for 300 minutes. Oxidation resistance of RBSC decreases with addition
of the above infiltrants. However, weight gain per unit area is
the lowest at higher temperatures (1400°, 1450°C) in case of RBSC
infiltrated with vanadium carbide. |
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