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Transactions of the INDIAN CERAMIC SOCIETY   Vol. 70  2011
CVD Grown Materials for High Temperature Electronic Devices : A Review
P. Bhattacharyya** and S. Basu*
Abstract
Chemical Vapour Deposition (CVD) remains an extremely popular area of fabricating electronic devices, operating at high temperature and in harsh environments. CVD offers an excellent process controllability and development of quality thin films on varieties of substrates that are compatible to standard IC technology. Plasma enhanced CVD (PECVD), atomic layer CVD (ALCVD), laser CVD and metal organic CVD (MOCVD) need special mention for their added advantages like low substrate temperature, high spatial resolution and precise doping, in addition to the high temperature stability of the films. In this review article, we critically discuss the various standard CVD processes for electronics industry and some high temperature non-oxide ceramic materials like SiC, III-nitrides and carbon nanotubes for electronic device applications. These include optoelectronics devices like laser diode, laser crystal cooling, microwave device, power semiconductor heat spreaders and high temperature pressure and chemical sensors. The prospect of the most recently reported CVD grown graphene for high temperature device applications has been highlighted.
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