| Influence of Bi2O3, TiO2 Additives and Sintering Process
on the Performance of ITO Target Based on Normal
Pressure Sintering Method |
Xiaoyu Zhai, Xueli Zhang, Yunqian Ma and Jiaxiang Liu*
Page : 83-88
DOI : 10.1080/0371750X.2019.1605935 |
| Abstract |
| additive on the properties of single-phase indium tin oxide (ITO) target, prepared
by normal pressure sintering method, were studied systematically. The results
showed that target sintered at 1550oC for 10 h with a heating rate of 9oC/min had
a higher relative density of 98.7% and a lower resistivity of 410–4 .cm. When
bismuth trioxide (Bi2O3) was added as a sintering additive, the density of target
prepared at 1450oC improved significantly from 87.15% to 93.17%, while the
resistivity increased to 73.6510–4 .cm due to poor electrical conductivity of Bi2O3.
Moreover, after adding titanium dioxide (TiO2) as sintering additive, density of the
target sintered at 1450oC improved from 87.15% to 91.43%. Importantly, the
resistivity reached the minimum value of 3.0510–4 .cm at 1550oC.
[Keywords: Indium tin oxide target, Normal pressure sintering, Bismuth trioxide,
Titanium dioxide] |
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