| Thermal Shock Resistance of Precursor Derived
Si-Hf-C-N(O) Foams |
Soumya Sridar,1 Eranezhuth Wasan Awin,1 Adhimoolam Bakthavachalam Kousaalya2
and Ravi Kumar1, *
Page : 78-82
DOI : 10.1080/0371750X.2019.1595152 |
| Abstract |
| Thermal shock resistance of precursor derived Si-Hf-C-N(O) foams at temperatures
varying from 800o-1000oC subjected to multiple thermal cycles was investigated.
The as-synthesized foams possessed interconnected pores with an average cell
size of 1.09 mm. The X-ray diffractograms of the foams before and after thermal
cycling showed that the amorphous nature of the foams was retained. FTIR spectra
exhibited that there was no change in the bonding characteristics due to thermal
shock. A damage parameter (DS) based on the compressive strength was used to
quantify the extent of damage. Densification was expected to occur in the first
thermal cycle and the strut structures did not show any sign of cracking. However,
cracking of struts occurred in the third thermal cycle which caused severe damage.
[Keywords: Thermal shock, Foams, Precursor derived, Porosity, Si-Hf-C-N(O)] |
| Full text : Subscribe to Download Full Text |
| [Go Back] |
|
