| Effect of SiO2 on the Varistor and Dielectric Properties
of SnO2-Zn2SnO4 Ceramic Composites |
Guo-Zhong Zang*, Xiao-Fei Wang and Li-Ben Li
School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471003, China
pages : 225-228
DOI : 10.1080/0371750X.2016.1229637 |
| Abstract |
| SnO2-Zn2SnO4 ceramic composites are prepared by traditional ceramics processing and
the effect of SiO2 on the varistor, dielectric properties has been investigated. With increasing
SiO2 content to 0.2 mol%, the nonlinear coefficient and the breakdown electrical field E1.0
gets to the maximum of 7.7 and minimum of 12 V.mm–1, respectively. Meanwhile, the
dielectric spectra show that the sample doped with 0.2 mol% SiO2 has the highest relative
permittivity r of ~7103 at 40 Hz, 40oC. The dielectric temperature spectra show that the
temperature stability of the dielectric properties can be improved by doping 0.2 mol% SiO2.
The good properties indicate that SiO2 doped SnO2-Zn2SnO4 ceramic composites are viable
candidate for capacitor-varistor functional devices to protect electrical micro-machines.
Further studies show that the density and grain uniformity of the composites are improved
by doping proper content of SiO2. The compact and uniform microstructure may be
responsible for the excellent varistor and dielectric properties.
[Keywords: Varistors, Electroceramics, Dielectric properties] |
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