| Gallium Nitride : Synthesis and Characterization |
Kalyan Adhikary and Subhadra Chaudhuri*
Pages : 1-16
DOI :10.1080/0371750X.2007.11012237 |
| Abstract |
| This review article presents the synthesis and important properties of bulk, thin film and different nanoforms of GaN. The nanoforms include nanocrystalline powder, nanowires and nanorods. The preparation and critical aspects of p-type and n-type GaN has been discussed in detail as the semiconducting proterties of this material have already been utilized in the industries for the fabrication of optoelectronic devices. Discussion in relation to improvement of light emitting diode application and some other probable applications based on typical properties of pure and doped GaN have been made. |
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